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Plastic-Encapsulate Transistors
FEATURES
Complementary to MMBT5551 Ideal for medium power amplification and switching
MMBT5401 (PNP)
MARKING: 2L
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-160
VCEO
-150
VEBO
-5
IC -0.6 PC 0.3
TJ 150
Tstg -55 to +150
Unit
V V V A W
1. BASE 2. EMITTER 3.