CS5J65B3-G Datasheet | HUAJING MICROELECTRONICS

Description ： CS5J65 B3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-251, which accords with the Ro HS standard. VDSS ID PD(TC=25℃) RDS(ON)Typ Features ： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 650 V 5A 72 W 0.9 Ω Symbol VDSS ID IDMa1 VGSS EAS a2 dv/dt a3 PD TJ，Tstg Parameter Drain-to-Source Voltage(VGS=0V) Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power...