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SOT-23-3 Plastic-Encapsulate Transistors
HX3401MOSFET(P-Channel)
FEATURES
High Power and current handing capability Lead free product is acquired Surface Mount Package MARKING: X18V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
-30 V
VGS Gate-Source voltage
±12
V
ID Drain current
-4.2 A
PD Power Dissipation
1.2 W
Tj Junction Temperature
-55-150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=-250uA
-30
V
Gate-Threshold Voltage
Vth(GS) VDS= VGS, ID=-250 uA
-0.7
-1
-1.