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HX3401 Datasheet PDF

HXDZ HX3401

P-Channel MOSFET

Part No. HX3401
Datasheet HX3401 Download
Manufacturer HXDZ
Description P-Channel MOSFET
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HX3401 datasheet page 1 preview

FEATURES

High Power and current handing capability Lead free product is acquired Surface Mount Package MARKING: X18V

MAXIMUM RATINGS

(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -30 V VGS Gate-Source voltage ±12 V ID Drain current -4.2 A PD Power Dissipation 1.2 W Tj Junction Temperature -55-150 ℃ Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS

(Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 V Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=-250 uA -0.7 -1 -1.4 V Gate-body Leakage Zero Gate Voltage Drain Current IGSS IDSS VDS=0V, VGS=±12V VDS=-30V, VGS=0V VGS=-2.5V, ID=-1A ±100 nA 1 uA 55 90 mΩ Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-4A 52 75 mΩ Forward Trans conductance VGS=-10V, ID=-4.2A gfs VDS=-5V, ID=-4.2A 48 mΩ 10 s Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VD...