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SOT-23-3 Plastic-Encapsulate Transistors
HX3402S MOSFET(N-Channel)
FEATURES TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter
MARKING: A29T
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
20 V
VGS Gate-Source voltage
±8 V
ID Drain current
3.6 A
PD Power Dissipation
1W
Tj Junction Temperature
150 ℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=250uA
20
V
Gate-Threshold Voltage
Vth(GS) VDS= VGS, ID=250 uA
0.5 0.75 1.