FEATURES
TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING: A29T MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage ±8 V ID Drain current 3.6 A PD Power Dissipation 1W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS
(Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 20 V Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 0.5 0.75 1.2 V Gate-body Leakage IGSS VDS=0V, VGS=±10V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Drain-Source On-Resistance rDS(ON) VGS=2.5V, ID=3A VGS=4.5V, ID=3.6A 42 70 mΩ 38 52 mΩ Forward Trans conductance gfs VDS=5V, ID=3A 9s Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS=10V, VGS=0V, f=1MHz 300 120 pF 80 Switching Capacitance Turn-on Del...