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HX3401S - P-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET Power MOSFET.

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Datasheet Details

Part number HX3401S
Manufacturer HXDZ
File Size 314.06 KB
Description P-Channel MOSFET
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SOT-23-3Plastic-Encapsulate Transistors HX3401S MOSFET(P-Channel) FEATURES TrenchFET Power MOSFET MARKING: A19T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage ±12 V ID Drain current -3 A PD Power Dissipation 1W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20 V Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Trans conductance Dynamic Characteristics Vth(GS) IGSS IDSS rDS(ON) gfs VDS= VGS, ID=-250 uA VDS=0V, VGS=±12V VDS=-20V,
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