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IRF511 - (IRF510 - IRF513) N-Channel Power MOSFETs

This page provides the datasheet information for the IRF511, a member of the IRF510 (IRF510 - IRF513) N-Channel Power MOSFETs family.

Datasheet Summary

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Features

  • 4.9A, and 5.6A, 80V and 100V.
  • rDS(ON) = 0.54Ω and 0.74Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF510 IRF511 IRF512 IRF513.

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Datasheet preview – IRF511

Datasheet Details

Part number IRF511
Manufacturer Harris Corporation
File Size Direct Link
Description (IRF510 - IRF513) N-Channel Power MOSFETs
Datasheet download datasheet IRF511 Datasheet
Additional preview pages of the IRF511 datasheet.

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www.DataSheet4U.com Semiconductor IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17441. January 1998 Features • 4.9A, and 5.6A, 80V and 100V • rDS(ON) = 0.
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