HAD825 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HAD825, a member of the HAD825_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HAD825
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	29.51 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HAD825 Datasheet
Additional preview pages of the HAD825 datasheet.

Darlington transistor. Spec. No. : HE6406 Issued Date : 1994.01.13 Revised Date : 2002.03.06 Page No. : 1/3 Absolute Maximum Ratings TO-92.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipations Total Power Dissipation (Ta=25°C) 625 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 80 V VCES Collector to Emitter Voltage 55 V VEBO Emitter to Base Voltage.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 22, 2005 |