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HAD826 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HAD826 datasheet PDF. This datasheet also covers the HAD826_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HAD826 is designed for general purpose amplifier and high speed, medium-power switching applications.

Key Features

  • Low Collector Saturation Voltage.
  • High Speed Switching Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
  • Maximum Power Dissipations Total Power Dissipation (Ta=25°C) 625 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 75 V VCEO Collector to Emit.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAD826_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HAD826
Manufacturer Hi-Sincerity Mocroelectronics
File Size 34.05 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HAD826 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6411-B Issued Date : 199.03.06 Revised Date : 2000.09.01 Page No. : 1/3 HAD826 NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826 is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation Voltage • High Speed Switching Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .......................................................................................... -55 ~ +150 °C Junction Temperature..................................................................................... 150 °C Maximum • Maximum Power Dissipations Total Power Dissipation (Ta=25°C) ..............................................................................