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HAD826SP - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HAD826SP datasheet PDF. This datasheet also covers the HAD826SP_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HAD826SP is designed for general purpose amplifier and high speed, medium-power switching applications.

Key Features

  • Low Collector Saturation Voltage.
  • High Speed Switching Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAD826SP_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HAD826SP
Manufacturer Hi-Sincerity Mocroelectronics
File Size 27.68 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HAD826SP Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HAD826 NPN EPITAXIAL PLANAR TRANSISTOR
HAD825 NPN EPITAXIAL PLANAR TRANSISTOR
HAD825SP NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :Preliminary Data Issued Date : 2000.10.01 Revised Date : 2000.10.01 Page No. : 1/3 HAD826SP NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826SP is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation Voltage • High Speed Switching Absolute Maximum Ratings • Maximum Temperatures Storage Temperature....................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................. 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ..........................................................