HAD825SP - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HAD825SP, a member of the HAD825SP_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HAD825SP
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	17.97 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HAD825SP Datasheet
Additional preview pages of the HAD825SP datasheet.

Darlington Transistor Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 625 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 80 V VCES Collector to Emitter Voltage 55 V VEBO Emitter to Base Voltage.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 22, 2005 |