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HBC807 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC807, a member of the HBC807_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Description

The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

Collector current capability IC=-800mA Collector-emitter voltage VCEO(max)=-45V General purpose switching and amplification NPN

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Datasheet Details

Part number HBC807
Manufacturer Hi-Sincerity Mocroelectronics
File Size 39.59 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC807 Datasheet
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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.04.18 Page No. : 1/4 HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.
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