Datasheet4U Logo Datasheet4U.com

HBC817 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC817, a member of the HBC817_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Description

The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Po

📥 Download Datasheet

Datasheet preview – HBC817

Datasheet Details

Part number HBC817
Manufacturer Hi-Sincerity Mocroelectronics
File Size 66.15 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC817 Datasheet
Additional preview pages of the HBC817 datasheet.

📁 Similar Datasheet

  • HBC8471S6R - NPN Transistor (CYStech Electronics)
  • HBC8472S6R - NPN Transistor (CYStech Electronics)
  • HBC114ES6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC114TS6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC114YC6 - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC114YS5 - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC114YS6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC123ES6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC123JS6R - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC124ES6R - Dual NPN Digital Transistors (CYStech Electronics)
Other Datasheets by Hi-Sincerity Mocroelectronics
  • HBC807 - PNP EPITAXIAL PLANAR TRANSISTOR
  • HBC846 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HBC847 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HBC848 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HBC856 - PNP EPITAXIAL PLANAR TRANSISTOR
  • HBC857 - PNP EPITAXIAL PLANAR TRANSISTOR
  • HBC858 - PNP EPITAXIAL PLANAR TRANSISTOR
  • HBC237 - NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2008.01.30 Page No. : 1/4 Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature.......................................................................................................................... -55 to +150 °C Junction Temperature.................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C)...............................................................
Published: |