| Part number | HBC817 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 66.15 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HBC817 Datasheet
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| Note |
This datasheet PDF includes multiple part numbers: HBC817, HBC817_Hi. Please refer to the document for exact specifications by model. |
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The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages. Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW Maximum Voltages and Currents (TA=25°C) VCES Collector to Base Voltage
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