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HBC848 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC848, a member of the HBC848_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Description

The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipatio

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Datasheet Details

Part number HBC848
Manufacturer Hi-Sincerity Mocroelectronics
File Size 66.76 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC848 Datasheet
Additional preview pages of the HBC848 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6843 Issued Date : 1994.07.29 Revised Date : 2008.01.30 Page No. : 1/4 Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature.......................................................................................................................... -55 to +150 °C Junction Temperature.................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C).....................................................
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