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HBC848 - NPN EPITAXIAL PLANAR TRANSISTOR

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Datasheet Details

Part number HBC848
Manufacturer Hi-Sincerity Mocroelectronics
File Size 66.76 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC848 Datasheet
Note This datasheet PDF includes multiple part numbers: HBC848, HBC848_Hi.
Please refer to the document for exact specifications by model.
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Description

The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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