Datasheet4U Logo Datasheet4U.com

HBC856 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC856, a member of the HBC856_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Description

The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipatio

📥 Download Datasheet

Datasheet preview – HBC856

Datasheet Details

Part number HBC856
Manufacturer Hi-Sincerity Mocroelectronics
File Size 38.17 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC856 Datasheet
Additional preview pages of the HBC856 datasheet.

📁 Similar Datasheet

  • HBC8471S6R - NPN Transistor (CYStech Electronics)
  • HBC8472S6R - NPN Transistor (CYStech Electronics)
  • HBC114ES6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC114TS6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC114YC6 - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC114YS5 - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC114YS6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC123ES6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC123JS6R - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC124ES6R - Dual NPN Digital Transistors (CYStech Electronics)
Other Datasheets by Hi-Sincerity Mocroelectronics
  • HBC857 - PNP EPITAXIAL PLANAR TRANSISTOR
  • HBC858 - PNP EPITAXIAL PLANAR TRANSISTOR
  • HBC807 - PNP EPITAXIAL PLANAR TRANSISTOR
  • HBC817 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HBC846 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HBC847 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HBC848 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HBC237 - NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. HBC856 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6832 Issued Date : 1994.02.03 Revised Date : 2004.09.01 Page No. : 1/4 Description The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature.......................................................................................................................... -55 to +150 °C Junction Temperature.................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C).....................................................
Published: |