| Part number | HBC856 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 38.17 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HBC856 Datasheet
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| Note |
This datasheet PDF includes multiple part numbers: HBC856, HBC856_Hi. Please refer to the document for exact specifications by model. |
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The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage
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