| Part number | HBC858 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 38.98 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HBC858 Datasheet
|
| Note |
This datasheet PDF includes multiple part numbers: HBC858, HBC858_Hi. Please refer to the document for exact specifications by model. |
|
|
The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage
📁 Similar Datasheet
