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HBD675 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBD675, a member of the HBD675_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Description

The HBD675 is designed for use as output devices in complementary general purpose amplifier applications.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipa

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Datasheet preview – HBD675

Datasheet Details

Part number HBD675
Manufacturer Hi-Sincerity Mocroelectronics
File Size 30.23 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBD675 Datasheet
Additional preview pages of the HBD675 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6619-C Issued Date : 1994.07.22 Revised Date : 2000.10.01 Page No. : 1/3 HBD675 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD675 is designed for use as output devices in complementary general purpose amplifier applications. Absolute Maximum Ratings(Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................
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