HBD678 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBD678, a member of the HBD678_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HBD678
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	22.84 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HBD678 Datasheet
Additional preview pages of the HBD678 datasheet.

The HBD678 is designed for use as output devices in complementary general purpose amplifier applications.

High Current Gain.
Monolithic Constructor Absolute Maximum Ratings (Ta=25°C).
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W.
Maximum Voltages and Currents BVCBO Collector to Base Voltage 60 V BVCEO Collector to Emitter Voltage 60 V BVEBO Emitter to Base Voltage 5 V IC Collector Current 4 A IB Base Current 1 A Electrical Characteris.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 23, 2005 |