Download the HBD678 datasheet PDF.
This datasheet also covers the HBD678_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The HBD678 is designed for use as output devices in complementary general purpose amplifier applications.
Key Features
High Current Gain.
Monolithic Constructor
Absolute Maximum Ratings (Ta=25°C).
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W.
Maximum Voltages and Currents BVCBO Collector to Base Voltage 60 V BVCEO Collector to Emitter Voltage 60 V BVEBO Emitter to Base Voltage 5 V IC Collector Current 4 A IB Base Current 1 A
Electrical Characteris.
Note: The manufacturer provides a single datasheet file (HBD678_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for HBD678 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HBD678. For precise diagrams, and layout, please refer to the original PDF.
0.10.01 Page No. : 1/2 HBD678 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD678 is designed for use as output devices in complementary general purpose amplifier applications. Features • High Current Gain • Monolithic Constructor Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ............................
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HBD678 Datasheet
