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HBD678 - NPN EPITAXIAL PLANAR TRANSISTOR

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Hi-Sincerity Mocroelectronics

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HBD678 NPN EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – HBD678

Datasheet Details

Part number	HBD678
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	22.84 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HBD678 Datasheet
Note	This datasheet PDF includes multiple part numbers: HBD678, HBD678_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HBD678 datasheet.

Product details

Description

The HBD678 is designed for use as output devices in complementary general purpose amplifier applications.

Features

High Current Gain.
Monolithic Constructor Absolute Maximum Ratings (Ta=25°C).
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W.
Maximum Voltages and Currents BVCBO Collector to Base Voltage 60 V BVCEO Collector to Emitter Voltage 60 V BVEBO Emitter to Base Voltage 5 V IC Collector Current 4 A IB Base Current 1 A Electrical Characteris.

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Published: Mar 23, 2005 |