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HBD677 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBD677, a member of the HBD677_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

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Datasheet preview – HBD677

Datasheet Details

Part number HBD677
Manufacturer Hi-Sincerity Mocroelectronics
File Size 30.23 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBD677 Datasheet
Additional preview pages of the HBD677 datasheet.

HBD677 Product details

Description

The HBD677 is designed for use as output devices in complementary general purpose amplifier applications.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissip

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