Download the HSC1815 datasheet PDF. This datasheet also covers the HSC1815_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C)
| Part number | HSC1815 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 46.23 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HSC1815 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HSC100 | Aluminium Housed Power Resistors | TE |
| HSC106D | Silicon Controlled Rectifier | SemiHow |
| HSC106M | Silicon Controlled Rectifier | SemiHow |
| HSC119 | Silicon Epitaxial Planar Diode for High Speed Switching | Hitachi Semiconductor |
| HSC150 | Aluminium Housed Power Resistors | TE |
| Part Number | Description |
|---|---|
| HSC1959 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HSC1959SP | NPN EPITAXIAL PLANAR TRANSISTOR |
| HSC2228Y | NPN EPITAXIAL PLANAR TRANSISTOR |
| HSC2240 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HSC2625 | NPN EPITAXIAL PLANAR TRANSISTOR |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
