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HSC1815 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSC1815, a member of the HSC1815_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C)

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Datasheet preview – HSC1815

Datasheet Details

Part number HSC1815
Manufacturer Hi-Sincerity Mocroelectronics
File Size 46.23 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSC1815 Datasheet
Additional preview pages of the HSC1815 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HSC1815 NPN Epitaxial Planar Transistor Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/4 Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature ..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................
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