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HSC2625 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSC2625, a member of the HSC2625_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HSC2625 is designed for triple diffused planer type high voltage, high speed switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power

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Datasheet preview – HSC2625

Datasheet Details

Part number HSC2625
Manufacturer Hi-Sincerity Mocroelectronics
File Size 23.28 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSC2625 Datasheet
Additional preview pages of the HSC2625 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HR200201 Issued Date : 1996.03.14 Revised Date : 2002.08.13 Page No. : 1/2 HSC2625 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2625 is designed for triple diffused planer type high voltage, high speed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-3P • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................
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