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HSC2682 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSC2682, a member of the HSC2682_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

Audio frequency power amplifier, high frequency power amplifier.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.2 W Total

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Datasheet preview – HSC2682

Datasheet Details

Part number HSC2682
Manufacturer Hi-Sincerity Mocroelectronics
File Size 38.96 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSC2682 Datasheet
Additional preview pages of the HSC2682 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HSC2682 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6626 Issued Date : 1994.12.07 Revised Date : 2006.02.20 Page No. : 1/4 Description Audio frequency power amplifier, high frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-126ML • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................................................
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