HSC1959 - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HSC1959
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	51.98 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSC1959 Datasheet
Note	This datasheet PDF includes multiple part numbers: HSC1959, HSC1959_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HSC1959 datasheet.

The HSC1959 is designed for audio frequency Low power amplifier applications.

Excellent hFE Linearity TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📁 Similar Datasheet

HSC100 - Aluminium Housed Power Resistors (TE)
HSC106D - Silicon Controlled Rectifier (SemiHow)
HSC106M - Silicon Controlled Rectifier (SemiHow)
HSC119 - Silicon Epitaxial Planar Diode for High Speed Switching (Hitachi Semiconductor)
HSC150 - Aluminium Housed Power Resistors (TE)
HSC200 - Aluminium Housed Power Resistors (TE)
HSC226 - Silicon Schottky Barrier Diode (Hitachi Semiconductor)
HSC226 - Silicon Schottky Barrier Diode (SEMTECH)

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 26, 2005 |