Datasheet4U Logo Datasheet4U.com

HSC1959 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSC1959, a member of the HSC1959_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HSC1959 is designed for audio frequency Low power amplifier applications.

Features

  • Excellent hFE Linearity TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Datasheet preview – HSC1959

Datasheet Details

Part number HSC1959
Manufacturer Hi-Sincerity Mocroelectronics
File Size 51.98 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSC1959 Datasheet
Additional preview pages of the HSC1959 datasheet.

📁 Similar Datasheet

  • HSC100 - Aluminium Housed Power Resistors (TE)
  • HSC106D - Silicon Controlled Rectifier (SemiHow)
  • HSC106M - Silicon Controlled Rectifier (SemiHow)
  • HSC119 - Silicon Epitaxial Planar Diode for High Speed Switching (Hitachi Semiconductor)
  • HSC150 - Aluminium Housed Power Resistors (TE)
  • HSC200 - Aluminium Housed Power Resistors (TE)
  • HSC226 - Silicon Schottky Barrier Diode (Hitachi Semiconductor)
  • HSC226 - Silicon Schottky Barrier Diode (SEMTECH)
  • HSC226 - Silicon Schottky Barrier Diode (Kexin)
  • HSC226 - Silicon Schottky Barrier Diode (Renesas)
Other Datasheets by Hi-Sincerity Mocroelectronics
  • HSC1959SP - NPN EPITAXIAL PLANAR TRANSISTOR
  • HSC1815 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HSC2228Y - NPN EPITAXIAL PLANAR TRANSISTOR
  • HSC2240 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HSC2625 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HSC2682 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HSC3417 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HSC3953 - NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. HSC1959 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6524 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page No. : 1/5 Description The HSC1959 is designed for audio frequency Low power amplifier applications. Features • Excellent hFE Linearity TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................
Published: |