HSC1959SP Datasheet PDF - Hi-Sincerity Mocroelectronics NPN EPITAXIAL PLANAR TRANSISTOR Specs

HSC1959SP - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSC1959SP, a member of the HSC1959SP_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HSC1959Y is designed for audio frequency Low power amplifier applications.

Features

Execellent hFE linearity.
Complementary to HSA562 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 35 V VCEO Collector to Emitter Voltage.

Datasheet Details

Part number	HSC1959SP
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	27.21 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSC1959SP Datasheet
Additional preview pages of the HSC1959SP datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HSP200203 Issued Date : 1998.01.06 Revised Date : 2002.03.04 Page No. : 1/3 HSC1959SP NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1959Y is designed for audio frequency Low power amplifier applications. Features • Execellent hFE linearity • Complementary to HSA562 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................

Published: Mar 26, 2005 |