HSC1959SP - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HSC1959SP
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	27.21 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSC1959SP Datasheet
Note	This datasheet PDF includes multiple part numbers: HSC1959SP, HSC1959SP_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HSC1959SP datasheet.

The HSC1959Y is designed for audio frequency Low power amplifier applications.

Execellent hFE linearity.
Complementary to HSA562 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 35 V VCEO Collector to Emitter Voltage.

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Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 26, 2005 |