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HSD468 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HSD468 datasheet PDF. This datasheet also covers the HSD468_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HSD468 is designed for general purpose low frequency power amplifier applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 m

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSD468_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSD468
Manufacturer Hi-Sincerity Mocroelectronics
File Size 53.28 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSD468 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSD468 NPN Epitaxial Planar Transistor Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2006.07.27 Page No. : 1/5 Description The HSD468 is designed for general purpose low frequency power amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature ........................................................................................................................................ 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ......................................................................