Download 2SC1907 Datasheet PDF
Hitachi Semiconductor
2SC1907
2SC1907 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial Planar Application UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 - 50 300 150 - 55 to +150 Unit V V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 19 2 - 40 - - 900 - Typ - - - - - 0.2 1.0 1100 10 8 Max - - - 0.5 - 1.0 2.0 - 25 - Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 3 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product Base time constant Oscillation output power V(BR)EBO I CBO h FE VCE(sat) Cob f T rbb’ Pout CC V p F MHz ps m W I C = 20 m A, IB = 4 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 10 m A VCB = 10 V, IC = 10 m A, f = 31.8 MHz VCB = 10 V, IC = 10 m A, f = 930 MHz - - Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 300 Collector Current IC (m A) Typical Output Caracteristics 20 0 13 120 110 100 90 80 70 60 50 = 30 0 m W 40 30 20 IB = 10 µA 4 8 12 16 20 100 150 50 Ambient Temperature Ta...