Renesas Electronics 2SC1907
Silicon NPN Transistor
| Part No. | 2SC1907 |
|---|---|
| Datasheet | 2SC1907 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature 3 2 1 Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 –50 300 150 –55 to +150 (Ta = 25°C) Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SC1907ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 19 — — V IC = 3 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 2 —— V IE = 10 µA, IC = 0 Collector cutoff current ICBO — — 0.5 µA VCB = 10 V, IE = 0 DC current transfer ratio hFE 40 — — VCE = 10 V, IC = 10 mA Collector to emitter saturation voltage VCE(sat) — 0.2 1.0 V IC = 20 mA, IB = 4 mA Collector output capacitance Cob — 1.0 2.0 pF VCB = 10 V, IE = 0, f = 1 MHz Gain bandwidth product fT 900 1100 — MH...
