Hitachi 2SC1907
Silicon NPN Transistor
| Part No. | 2SC1907 |
|---|---|
| Datasheet | 2SC1907 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 –50 300 150 –55 to +150 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 19 2 — 40 — — 900● Typ — — — — — 0.2 1.0 1100 10 8 Max — — — 0.5 — 1.0 2.0 — 25 — Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 3 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product Base time constant Oscillation output power V(BR)EBO I CBO hFE VCE(sat) Cob fT rbb’ Pout CC V pF MHz ps mW I C = 20 mA, IB =...
