Inchange Semiconductor 2SC1907
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC1907 |
|---|---|
| Datasheet | 2SC1907 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise●High Gain Bandwidth Product
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for VHF TV tuner and local oscillator applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 50 mA IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -50 mA 0.3 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC1907ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA ; RBE= ∞ 19 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 2 V VC...