Semtech Corporation 2SC1907
NPN Silicon Transistor
| Part No. | 2SC1907 |
|---|---|
| Datasheet | 2SC1907 Download |
| Manufacturer |  Semtech Corporation |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(T a = 25 OC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC -IE Ptot Tj TS G S P FORM A IS AVAILABLE Value 30 19 2 50 50 300 150 -55 to +150 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® ST 2SC1907 Characteristics at Tamb=25 OC DC Current Gain at VCE=10V, IC=10mA Current Gain Group Collector Base Breakdown voltage at IC =10 µA Collector Emitter Breakdown Voltage at IC =3mA Emitter Base Breakdown Voltage at IE =10 µA Collector Cutoff Current at VCB=10V Collector Emitter Saturation Voltage at IC=20mA, IB=4mA Transition Frequency at VCE=10V, IC=10mA Collector Output Capacitance at VCB=10V, f=1MHz Base Time Constant at VCB=10V, IC=10mA f= 31.8 MHz Oscillation Output Power at VCB=10V, IC=10mA f= 930 MHz Symbol hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) fT COB rbb’● Cc Pout Min.
