Datasheet4U Logo Datasheet4U.com

2SD2115S - Silicon NPN Transistor

📥 Download Datasheet

Datasheet preview – 2SD2115S

Datasheet Details

Part number 2SD2115S
Manufacturer Hitachi Semiconductor
File Size 31.44 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD2115S Datasheet
Additional preview pages of the 2SD2115S datasheet.

📁 Similar Datasheet

  • 2SD211 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD211 - NPN Transistor (INCHANGE)
  • 2SD2110 - Power Transistor (Inchange Semiconductor)
  • 2SD2111 - NPN Transistor (INCHANGE)
  • 2SD2112 - Power Transistor (Inchange Semiconductor)
  • 2SD2113 - Power Transistor (Inchange Semiconductor)
  • 2SD2114 - NPN Transistor (JCST)
  • 2SD2114 - NPN Transistor (SeCoS)
  • 2SD2114 - Silicon Epitaxial Planar Transistor (GME)
  • 2SD2114K - High-current Gain Medium Power Transistor (Rohm)
Other Datasheets by Hitachi Semiconductor
  • 2SD2115 - Silicon NPN Epitaxial Planar Transistor
  • 2SD2115L - Silicon NPN Transistor
  • 2SD2111 - Silicon NPN Transistor
  • 2SD2101 - Silicon NPN Transistor
  • 2SD2102 - Silicon NPN Triple Diffused Transistor
  • 2SD2103 - Silicon NPN Transistor
  • 2SD2104 - Silicon NPN Transistor
  • 2SD2106 - Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text
2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Rating 150 60 5 2 2.5 18 150 –55 to +150 Unit V V V A A W °C °C 2SD2115(L)/(S) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 60 5 — 150 — — — Typ — — — — — — — — Max — — — 10 — 0.8 1.3 0.
Published: |