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2SH30 - N-Channel MOSFET

Key Features

  • High speed switching.
  • Low on-voltage Outline TO.
  • 3P C G E 1 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH30 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 50 100 100 150.
  • 55 to +150 Unit V V A A W °C °C Electri.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SH31 N-Channel MOSFET
2SH11 Silicon N-Channel IGBT
2SH12 Silicon N-Channel IGBT
2SH13 Silicon N-Channel IGBT
2SH14 Silicon N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SH30 Silicon N Channel IGBT High Speed Power Switching ADE-208-792A(Z) 2nd. Edition May 1999 Features • High speed switching • Low on-voltage Outline TO–3P C G E 1 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH30 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 50 100 100 150 –55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Symbol I CES I GES Min — — 6.0 — — — — — — Typ — — — 2.1 2800 280 430 300 650 Max 250 ±1 8.0 2.