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2SJ517 - Silicon P-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =.
  • 4V, ID =.
  • 1A).
  • Low drive current.
  • High speed switching.
  • 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ517 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDS.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ518 Silicon P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ517 Silicon P Channel MOS FET High Speed Power Switching ADE-208-575B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =–4V, ID =–1A) • Low drive current • High speed switching • 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ517 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –20 ±10 –2 –4 –2 1 150 –55 to +150 Unit V V A A A W °C °C 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. When using aluminium ceramic board (12.5 x 20 x 0.