Datasheet Summary
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-575B (Z) 3rd. Edition Jun 1998 Features
- Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =- 4V, ID =- 1A)
- Low drive current
- High speed switching
- 2.5V gate drive devices.
Outline
UPAK
1. Gate 2. Drain 3. Source 4....