2SJ517 Overview
2SJ517 Silicon P Channel MOS FET High Speed Power Switching ADE-208-575B (Z) 3rd.
2SJ517 Key Features
- Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =-4V, ID =-1A)
- Low drive current
- High speed switching
- 2.5V gate drive devices
2SJ517 Datasheet Details
| Part number | 2SJ517 |
|---|---|
| Datasheet | 2SJ517_HitachiSemiconductor.pdf |
| File Size | 43.88 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon P-Channel MOSFET |
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