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2SJ517 Datasheet Silicon P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ517 Silicon P Channel MOS FET High Speed Power Switching ADE-208-575B (Z) 3rd.

Key Features

  • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =.
  • 4V, ID =.
  • 1A).
  • Low drive current.
  • High speed switching.
  • 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ517 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDS.

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