2SJ586 Datasheet Silicon P Channel Mos Fet High Speed Switching

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A (Z) 2nd.Edition.

Datasheet Details

Part number	2SJ586
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	41.39 KB
Description	Silicon P Channel MOS FET High Speed Switching
Datasheet	2SJ586_HitachiSemiconductor.pdf

Key Features

Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA).
2.5 V gate drive device.
Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS V.

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