2SJ588 Datasheet Silicon P Channel Mos Fet High Speed Switching

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ588 Silicon P Channel MOS FET High Speed Switching ADE-208-802 (Z) 1st.Edition.

Datasheet Details

Part number	2SJ588
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	26.14 KB
Description	Silicon P Channel MOS FET High Speed Switching
Datasheet	2SJ588_HitachiSemiconductor.pdf

Key Features

Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , I D = -50 mA).
4 V gate drive device. Outline SPAK D 3 12 3 2 G 1. Source 2. Drain 3. Gate S 1 2SJ588 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS I.

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