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2SJ587 - Silicon P Channel MOS FET High Speed Switching

Key Features

  • Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA).
  • 2.5 V gate drive device.
  • Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ587 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ586 Silicon P Channel MOS FET High Speed Switching
2SJ588 Silicon P Channel MOS FET High Speed Switching
2SJ50 P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 (Z) 1st.Edition. June 1999 Features • Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA) • 2.5 V gate drive device. • Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ587 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings -20 ±10 -50 -200 -50 100 150 –55 to +150 Unit V V mA mA mA mW °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x 20 x0.