2SJ587 Overview
2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 (Z) 1st.Edition.
2SJ587 Key Features
- Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA)
- 2.5 V gate drive device
- Small package (SMPAK)