2SJ587 Datasheet Silicon P Channel Mos Fet High Speed Switching

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 (Z) 1st.Edition.

Datasheet Details

Part number	2SJ587
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	39.76 KB
Description	Silicon P Channel MOS FET High Speed Switching
Datasheet	2SJ587_HitachiSemiconductor.pdf

Key Features

Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA).
2.5 V gate drive device.
Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ587 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS.

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