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2SK2738 - N-CHANNEL MOS FET

Key Features

  • Low on-resistance R DS = 15 mΩ typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline TO.
  • 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2738 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse).
  • 3 3 2 1 Ratings 60 ±20 40 160 40 40 137 30 150.
  • 55 to +150 Unit V V A A A A mJ W °C °C Body to drain diode reverse d.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2738 Silicon N Channel MOS FET High Speed Power Switching ADE-208-483 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2738 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)* 3 3 2 1 Ratings 60 ±20 40 160 40 40 137 30 150 –55 to +150 Unit V V A A A A mJ W °C °C Body to drain diode reverse drain current I DR Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature I AP * EAR* Pch* Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.