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2SK2929 - Silicon N Channel MOS FET

Features

  • Low on-resistance R DS =0.026 Ω typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline TO.
  • 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2929 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VG.

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Datasheet Details

Part number 2SK2929
Manufacturer Hitachi Semiconductor
File Size 52.68 KB
Description Silicon N Channel MOS FET
Datasheet download datasheet 2SK2929 Datasheet
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2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2929 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 25 100 25 20 34 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
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