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2SK2929 Datasheet Silicon N-Channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

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Overview

2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552C (Z) 4th.

Key Features

  • Low on-resistance R DS =0.026 Ω typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline TO.
  • 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2929 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VG.

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