Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-767C (Z) 4th. Edition February 1999 Features
- Low on-resistance R DS(on) = 6 mΩ typ.
- Low drive current
- 4 V gate drive device can be driven from 5 V source
Outline
TO- 220CFM
G 1 2 3
1. Gate 2. Drain 3....