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2SK3141 Datasheet N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK3141 Silicon N Channel MOS FET High Speed Power Switching ADE-208-680B (Z) 3rd.

Key Features

  • Low on-resistance R DS(on) = 4 mΩ typ.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source Outline TO.
  • 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3141 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS V.

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
Renesas Logo 2SK3141 Silicon N-Channel MOS FET Renesas

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