Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-680B (Z) 3rd. Edition February 1999 Features
- Low on-resistance R DS(on) = 4 mΩ typ.
- Low drive current
- 4 V gate drive device can be driven from 5 V source
Outline
TO- 220AB
1 2 S 3
1. Gate 2. Drain(Flange) 3....
