3SK186 datasheet by Hitachi Semiconductor (now Renesas).
| Part number | 3SK186 |
|---|---|
| Datasheet | 3SK186_HitachiSemiconductor.pdf |
| File Size | 31.93 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel Dual Gate MOS FET |
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3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1. Gate 1 to Source Voltage 20 VDS = 4 V 3 2 2.5 1.5 Drain Current ID (mA) 20 Drain Current vs. Gate 1 to Source Voltage Forward Transfer Admittance yfs (mS) 20 VDS = 6 V 3 2.5 2.0 Power Gain PG (dB) 20 Power Gain vs.
View all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| 3SK194 | Silicon N-Channel Dual Gate MOS FET |
| 3SK228 | Silicon NPN Triple Diffused |
| 3SK233 | Silicon N-Channel Dual Gate MOS FET |
| 3SK239A | GaAs Dual Gate MES FET |
| 3SK290 | Silicon N-Channel Dual Gate MOS FET |
| 3SK295 | Silicon N-Channel Dual Gate MOS FET |
| 3SK296 | Silicon N-Channel Dual-Gate MOSFET |
| 3SK297 | Silicon N-Channel Dual Gate MOS FET |
| 3SK298 | Silicon N-Channel Dual Gate MOS FET |
| 3SK300 | Silicon N-Channel Transistor |
