4AK17 Description
4AK17 Silicon N-Channel Power MOS FET Array Application High speed power switching.
4AK17 Key Features
- Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D = 10 A R DS(on) ≤ 0.065 , VGS = 4 V, I D = 10 A
- Capable of 4 V gate drive
- Low drive current
- High speed switching
- High density mounting
- Suitable for motor driver, solenoid driver and lamp driver