4AK18 Description
4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching.
4AK18 Key Features
- Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A
- Capable of 4 V gate drive
- Low drive current
- High speed switching
- High density mounting
- Suitable for motor driver, solenoid driver and lamp driver