Datasheet4U Logo Datasheet4U.com

4AK18 - Silicon N-Channel Power MOS FET Array

Datasheet Summary

Features

  • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A.
  • Capable of 4 V gate drive.
  • Low drive current.
  • High speed switching.
  • High density mounting.
  • Suitable for motor driver, solenoid driver and lamp driver 4AK18 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to s.

📥 Download Datasheet

Datasheet preview – 4AK18

Datasheet Details

Part number 4AK18
Manufacturer Hitachi Semiconductor
File Size 49.88 KB
Description Silicon N-Channel Power MOS FET Array
Datasheet download datasheet 4AK18 Datasheet
Additional preview pages of the 4AK18 datasheet.

📁 Similar Datasheet

Other Datasheets by Hitachi Semiconductor
  • 4AK15 - Silicon N-Channel Power MOS FET Array
  • 4AK16 - Silicon N-Channel Power MOS FET Array
  • 4AK17 - Silicon N-Channel Power MOS FET Array
  • 4AK19 - Silicon N Channel MOS FET High Speed Power Switching
  • 4AK20 - Silicon N-Channel Power MOS FET Array
  • 4AK21 - Silicon N-Channel Power MOS FET Array
  • 4AK22 - Silicon N-Channel Power MOS FET Array
  • 4AK23 - Silicon N-Channel Power MOS FET Array

Full PDF Text Transcription

Click to expand full text
4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver 4AK18 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
Published: |