4AK20 - Silicon N-Channel Power MOS FET Array

Datasheet Summary

Features

Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A.
Capable of 4 V gate drive.
Low drive current.
High speed switching.
High density mounting.
Suitable for motor driver, solenoid driver and lamp driver.
Discrete packaged devices of same die: 2SK1300, 2SK1305 4AK20 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Dr.

Hitachi Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	4AK20
Manufacturer	Hitachi Semiconductor
File Size	36.81 KB
Description	Silicon N-Channel Power MOS FET Array
Datasheet	4AK20 Datasheet
Additional preview pages of the 4AK20 datasheet.

📁 Similar Datasheet

Other Datasheets by Hitachi Semiconductor

4AK21 - Silicon N-Channel Power MOS FET Array
4AK22 - Silicon N-Channel Power MOS FET Array
4AK23 - Silicon N-Channel Power MOS FET Array
4AK25 - Silicon N-Channel Power MOS FET Array
4AK26 - Silicon N-Channel Power MOS FET Array
4AK27 - Silicon N Channel MOS FET High Speed Power Switching
4AK15 - Silicon N-Channel Power MOS FET Array
4AK16 - Silicon N-Channel Power MOS FET Array

Full PDF Text Transcription

Click to expand full text

4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver • Discrete packaged devices of same die: 2SK1300, 2SK1305 4AK20 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9.

Published: Apr 1, 2005 |