4AK20 Overview
4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching.
4AK20 Key Features
- Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A
- Capable of 4 V gate drive
- Low drive current
- High speed switching
- High density mounting
- Suitable for motor driver, solenoid driver and lamp driver
- Discrete packaged devices of same die: 2SK1300, 2SK1305