4AK23 Overview
Key Features
- Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A
- Low drive current
- High speed switching
- High density mounting
- Gate 2, 4, 9
| Part | 4AK23 |
|---|---|
| Description | Silicon N-Channel Power MOS FET Array |
| Manufacturer | Hitachi Semiconductor |
| Size | 40.08 KB |
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| No distributor offers were returned for this part. | |||
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| CTA2P1N | Diodes Incorporated | COMPLEX TRANSISTOR ARRAY |
| CTA2N1P | Diodes Incorporated | COMPLEX TRANSISTOR ARRAY |
| 7003 | Allegro MicroSystems | HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAY |