4AK23 - Silicon N-Channel Power MOS FET Array

Datasheet Summary

Features

Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A.
Low drive current.
High speed switching.
High density mounting.
Suitable for H-bridged motor driver Outline SP-12TA 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 12 3 4 5 6 7 8 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source 4AK23 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak c.

Hitachi Semiconductor

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Datasheet Details

Part number	4AK23
Manufacturer	Hitachi Semiconductor
File Size	40.08 KB
Description	Silicon N-Channel Power MOS FET Array
Datasheet	4AK23 Datasheet
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4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver Outline SP-12TA 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 12 3 4 5 6 7 8 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source 4AK23 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.

Published: Apr 1, 2005 |