4AK22 Overview
Key Specifications
Key Features
- Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A
- Capable of 4 V gate drive
- Low drive current
- High speed switching
- High density mounting
| Part | 4AK22 |
|---|---|
| Description | Silicon N-Channel Power MOS FET Array |
| Manufacturer | Hitachi Semiconductor |
| Size | 36.97 KB |
Pricing from 9.68 USD, available from Newark and Avnet.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 0 | 120+ : 9.68 USD 500+ : 8.3 USD 1000+ : 7.87 USD |
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| Avnet | 0 | 120+ : 8.32718 USD 600+ : 7.11165 USD 1080+ : 7.07518 USD 2160+ : 7.03871 USD |
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Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| CTA2P1N | Diodes Incorporated | COMPLEX TRANSISTOR ARRAY |
| CTA2N1P | Diodes Incorporated | COMPLEX TRANSISTOR ARRAY |
| 7003 | Allegro MicroSystems | HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAY |