4AK22 Description
4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching.
4AK22 Key Features
- Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A
- Capable of 4 V gate drive
- Low drive current
- High speed switching
- High density mounting
- Suitable for motor driver, solenoid driver and lamp driver
- Discrete packaged devices of same die: 2SK1254(L), 2SK1254(S)