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4AK26

Manufacturer: Hitachi Semiconductor (now Renesas)

4AK26 datasheet preview

Datasheet Details

Part number	4AK26
Datasheet	4AK26_HitachiSemiconductor.pdf
File Size	52.90 KB
Manufacturer	Hitachi Semiconductor (now Renesas)
Description	Silicon N-Channel Power MOS FET Array

4AK26 Overview

4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching.

4AK26 Key Features

Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.075 , VGS = 4 V, I D = 5 A
Capable of 4 V gate drive
Low drive current
High speed switching
High density mounting
Suitable for motor driver and solenoid driver and lamp driver

More Datasheets from Hitachi Semiconductor (now Renesas)

See all Hitachi Semiconductor (now Renesas) datasheets

Part Number	Description
4AK20	Silicon N-Channel Power MOS FET Array
4AK21	Silicon N-Channel Power MOS FET Array
4AK22	Silicon N-Channel Power MOS FET Array
4AK23	Silicon N-Channel Power MOS FET Array
4AK25	Silicon N-Channel Power MOS FET Array
4AK27	Silicon N Channel MOS FET High Speed Power Switching
4AK15	Silicon N-Channel Power MOS FET Array
4AK16	Silicon N-Channel Power MOS FET Array
4AK17	Silicon N-Channel Power MOS FET Array
4AK18	Silicon N-Channel Power MOS FET Array

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