• Part: 4AK26
  • Description: Silicon N-Channel Power MOS FET Array
  • Manufacturer: Hitachi Semiconductor
  • Size: 52.90 KB
Download 4AK26 Datasheet PDF
Hitachi Semiconductor
4AK26
4AK26 is Silicon N-Channel Power MOS FET Array manufactured by Hitachi Semiconductor.
Silicon N-Channel Power MOS FET Array Application High speed power switching Features - Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.075 , VGS = 4 V, I D = 5 A - Capable of 4 V gate drive - Low drive current - High speed switching - High density mounting - Suitable for motor driver and solenoid driver and lamp driver Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 56 78 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10....