• Part: 4AK21
  • Description: Silicon N-Channel Power MOS FET Array
  • Manufacturer: Hitachi Semiconductor
  • Size: 36.93 KB
Download 4AK21 Datasheet PDF
Hitachi Semiconductor
4AK21
4AK21 is Silicon N-Channel Power MOS FET Array manufactured by Hitachi Semiconductor.
Silicon N-Channel Power MOS FET Array Application High speed power switching Features - Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A - Capable of 4 V gate drive - Low drive current - High speed switching - High density mounting - Suitable for motor driver, solenoid driver and lamp driver - Discrete packaged devices of same die: 2SK1302, 2SK1307 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9....