4AK21 Description
4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching.
4AK21 Key Features
- Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A
- Capable of 4 V gate drive
- Low drive current
- High speed switching
- High density mounting
- Suitable for motor driver, solenoid driver and lamp driver
- Discrete packaged devices of same die: 2SK1302, 2SK1307