4AK25 Description
4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching.
4AK25 Key Features
- Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A
- Low drive current
- High speed switching
- High density mounting
- Part: 4AK25
- Manufacturer: Hitachi Semiconductor
- Size: 39.87 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 4AK20 | Silicon N-Channel Power MOS FET Array |
| 4AK21 | Silicon N-Channel Power MOS FET Array |
| 4AK22 | Silicon N-Channel Power MOS FET Array |
| 4AK23 | Silicon N-Channel Power MOS FET Array |
| 4AK26 | Silicon N-Channel Power MOS FET Array |