4AK25 Overview
4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching.
4AK25 Key Features
- Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A
- Low drive current
- High speed switching
- High density mounting
Datasheet Details
| Part number | 4AK25 |
|---|---|
| Datasheet | 4AK25_HitachiSemiconductor.pdf |
| File Size | 39.87 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel Power MOS FET Array |
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