4AK25 - Silicon N-Channel Power MOS FET Array

Datasheet Summary

Features

Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A.
Low drive current.
High speed switching.
High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK25 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Cha.

Hitachi Semiconductor

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Datasheet Details

Part number	4AK25
Manufacturer	Hitachi Semiconductor
File Size	39.87 KB
Description	Silicon N-Channel Power MOS FET Array
Datasheet	4AK25 Datasheet
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4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A • Low drive current • High speed switching • High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK25 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Ratings 60 ±20 1.5 4.5 1.5 24 3.

Published: Apr 1, 2005 |