4AK19 - Silicon N Channel MOS FET High Speed Power Switching

Datasheet Summary

Features

Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A.
4 V gate drive devices.
High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK19 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipat.

Hitachi Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	4AK19
Manufacturer	Hitachi Semiconductor
File Size	53.09 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	4AK19 Datasheet
Additional preview pages of the 4AK19 datasheet.

📁 Similar Datasheet

Other Datasheets by Hitachi Semiconductor

4AK15 - Silicon N-Channel Power MOS FET Array
4AK16 - Silicon N-Channel Power MOS FET Array
4AK17 - Silicon N-Channel Power MOS FET Array
4AK18 - Silicon N-Channel Power MOS FET Array
4AK20 - Silicon N-Channel Power MOS FET Array
4AK21 - Silicon N-Channel Power MOS FET Array
4AK22 - Silicon N-Channel Power MOS FET Array
4AK23 - Silicon N-Channel Power MOS FET Array

Full PDF Text Transcription

Click to expand full text

4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices. • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK19 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.

Published: Apr 1, 2005 |