4AK19 Datasheet | Hitachi Semiconductor

Features - Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A - 4 V gate drive devices. - High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 devices poeration Symbol VDSS VGSS ID I D(pulse) I DR Pch(Tc = 25°C) Pch Tch Tstg Note2 Note2 Note1 Ratings 120 ±20 5 10 5 28 3.5 150 - 55 to +150 Unit V V A A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 ±20 - - 1.0 - - 3 - - - - - - - - - - Typ - - - - - 0.3 0.35 5 25 140 3 2.5 0.3 0.45 6.6 1.4 1.1 600 Max - - 100 ±10 2.0 0.5 0.6 - - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F kΩ µs µs µs µs V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0 di F/ dt = 50A/ µs Test Conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VDS = 100 V, VGS = 0 VGS = ±16 V, VDS = 0 I D = 1 m A, VDS = 10 V I D = 2.5 A, VGS = 10 V Note3 I D = 2.5 A, VGS = 4 V Note3 I D = 2.5 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDS = 0, VGS = 0, f = 1 MHz VGS = 10 V, ID = 2.5 A RL = 12 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 3. Pulse test I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg t d(on) tr t d(off) tf...