4AK19 Description
4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st.
4AK19 Key Features
- Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A
- 4 V gate drive devices
- High density mounting