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HAF2011L Datasheet Silicon N Channel Mos Fet Series Power Switching

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAF2011(L),HAF2011(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-738 (Z) 1st. Edition Jan.

HAF2011L datasheet preview

Datasheet Details

Part number	HAF2011L
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	34.68 KB
Description	Silicon N Channel MOS FET Series Power Switching
Datasheet	HAF2011L_HitachiSemiconductor.pdf

Key Features

This FET has the over temperature shut.
down capability sensing to the junction temperature. This FET has the built.
in over temperature shut.
down circuit in the gate area. And this circuit operation to shut.
down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number	Description
HAF2011	Silicon N Channel MOS FET Series Power Switching
HAF2011S	Silicon N Channel MOS FET Series Power Switching
HAF2015RJ	N-Channel MOSFET
HAF2001	Silicon N Channel MOS FET Series Power Switching
HAF2002	Silicon N Channel MOS FET Series Power Switching
HAF2005	Silicon N Channel MOS FET Series Power Switching
HAF2007	Silicon N Channel MOS FET Series Power Switching
HAF2007L	Silicon N Channel MOS FET Series Power Switching
HAF2007S	Silicon N Channel MOS FET Series Power Switching
HAF1001	P-Channel MOSFET

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